Effects of thermal treatment on radiative properties of HVPE grown InP layers
2014 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 95, 15-18 p.Article in journal (Refereed) Published
Radiative efficiency of highly luminescent bulk InP wafers severely degrades upon heat treatment involved in epitaxial growth of quaternary layers and fabrication of photodiodes on the surface. This unfortunate property impedes the use of bulk InP as scintillator material. On the other hand, it is known that thin epitaxial InP layers, grown by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), do not exhibit any degradation. These layers, however, are too thin to be useful in scintillators. The capability of hydride vapor phase epitaxy (HVPE) process to grow thick bulk-like layers in reasonable time is well known, but the radiative properties of HVPE InP layers are not known. We have studied radiative properties of 21 mu m thick InP layers grown by HVPE and found them comparable to those of best luminescent bulk InP virgin wafers. In contrast to the bulk wafers, the radiative efficiency of HVPE layers does not degrade upon heat treatment. This opens up the possibility of implementing free-standing epitaxial InP scintillator structures endowed with surface photodiodes for registration of the scintillation. (C) 2014 Elsevier Ltd. All rights reserved.
Place, publisher, year, edition, pages
2014. Vol. 95, 15-18 p.
Bulk InP luminescence, Hydride vapor phase epitaxy, Semiconductor scintillators, Thermal degradation, Thick epitaxial layers
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-147432DOI: 10.1016/j.sse.2014.02.014ISI: 000336776600003ScopusID: 2-s2.0-84897461180OAI: oai:DiVA.org:kth-147432DiVA: diva2:730729
QC 201406302014-06-302014-06-272014-06-30Bibliographically approved