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Effects of carbon pre-silicidation implant into Si substrate on NiSi
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2014 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 120, 178-181 p.Article in journal (Refereed) Published
Abstract [en]

In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work.

Place, publisher, year, edition, pages
2014. Vol. 120, 178-181 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-147425DOI: 10.1016/j.mee.2013.08.010ISI: 000336697300030ScopusID: 2-s2.0-84899053565OAI: diva2:731016

QC 20140630

Available from: 2014-06-30 Created: 2014-06-27 Last updated: 2014-06-30Bibliographically approved

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Luo, JunZhang, Shi-Li
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