Effects of carbon pre-silicidation implant into Si substrate on NiSi
2014 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 120, 178-181 p.Article in journal (Refereed) Published
In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work.
Place, publisher, year, edition, pages
2014. Vol. 120, 178-181 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-147425DOI: 10.1016/j.mee.2013.08.010ISI: 000336697300030ScopusID: 2-s2.0-84899053565OAI: oai:DiVA.org:kth-147425DiVA: diva2:731016
QC 201406302014-06-302014-06-272014-06-30Bibliographically approved