Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of carbon pre-silicidation implant into Si substrate on NiSi
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
Show others and affiliations
2014 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 120, 178-181 p.Article in journal (Refereed) Published
Abstract [en]

In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work.

Place, publisher, year, edition, pages
2014. Vol. 120, 178-181 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-147425DOI: 10.1016/j.mee.2013.08.010ISI: 000336697300030Scopus ID: 2-s2.0-84899053565OAI: oai:DiVA.org:kth-147425DiVA: diva2:731016
Note

QC 20140630

Available from: 2014-06-30 Created: 2014-06-27 Last updated: 2017-12-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Luo, JunÖstling, MikaelZhang, Shi-Li
By organisation
Integrated Devices and Circuits
In the same journal
Microelectronic Engineering
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 40 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf