Thin PZT film pressure microsensor
2001 (English)In: Materials Research Society Symposium Proceedings, ISSN 0272-9172, Vol. 666, F8121-F8126 p.Article in journal (Refereed) Published
We report on a ferroelectric film pressure sensor fabricated on the top of 4 mm long and 1.4 mm in diameter Pt80Ir20 (PtIr) rod-shaped tip. It consists of a PZT(0.5 μm)/LSMO(0.1 μm) film heterostructure, deposited by pulsed laser ablation of stoichiometric ceramic targets PbZr0.52Ti0.48O3 and La0.67Sr0.33MnO3, and a circular, ∅ = 1.2 mm, Au electrode on the top of the PZT film. The Au/PZT/LSMO/PtIr thin-film capacitor demonstrates good ferroelectric properties: dielectric constant of 762 and loss tanδ =0.008 @ 5 kHz, induced polarization as high as 32 μC/cm2 at electric field of 250 kV/cm. Piezoelectric test, performed in a hydrostatic pressure chamber, exhibits the piezoelectric constant to be as high as 67 pC/N. This is 20% higher than 56 pC/N shown by a polarized bulk PZT sensor fabricated from the ceramics used as the target in the pulsed laser deposition process. Such an increase of the piezoelectric constant we attribute to the preferential (001) orientation of the PZT film grown on the PtIr bulk substrate. The resolution of the thin PZT film pressure microsensor was found to be about 1 mbar.
Place, publisher, year, edition, pages
2001. Vol. 666, F8121-F8126 p.
Capacitors, Electrodes, Ferroelectric thin films, Film growth, Permittivity, Piezoelectric materials, Pressure measurement, Pulsed laser deposition, Pressure microsensors
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-4977OAI: oai:DiVA.org:kth-4977DiVA: diva2:7311
QC 201010152005-03-072005-03-072010-10-15Bibliographically approved