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Thin PZT film pressure microsensor
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Materials Research Society Symposium Proceedings, ISSN 0272-9172, E-ISSN 1946-4274, Vol. 666, F8121-F8126 p.Article in journal (Refereed) Published
Abstract [en]

We report on a ferroelectric film pressure sensor fabricated on the top of 4 mm long and 1.4 mm in diameter Pt80Ir20 (PtIr) rod-shaped tip. It consists of a PZT(0.5 μm)/LSMO(0.1 μm) film heterostructure, deposited by pulsed laser ablation of stoichiometric ceramic targets PbZr0.52Ti0.48O3 and La0.67Sr0.33MnO3, and a circular, ∅ = 1.2 mm, Au electrode on the top of the PZT film. The Au/PZT/LSMO/PtIr thin-film capacitor demonstrates good ferroelectric properties: dielectric constant of 762 and loss tanδ =0.008 @ 5 kHz, induced polarization as high as 32 μC/cm2 at electric field of 250 kV/cm. Piezoelectric test, performed in a hydrostatic pressure chamber, exhibits the piezoelectric constant to be as high as 67 pC/N. This is 20% higher than 56 pC/N shown by a polarized bulk PZT sensor fabricated from the ceramics used as the target in the pulsed laser deposition process. Such an increase of the piezoelectric constant we attribute to the preferential (001) orientation of the PZT film grown on the PtIr bulk substrate. The resolution of the thin PZT film pressure microsensor was found to be about 1 mbar.

Place, publisher, year, edition, pages
2001. Vol. 666, F8121-F8126 p.
Keyword [en]
Capacitors, Electrodes, Ferroelectric thin films, Film growth, Permittivity, Piezoelectric materials, Pressure measurement, Pulsed laser deposition, Pressure microsensors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-4977OAI: oai:DiVA.org:kth-4977DiVA: diva2:7311
Note
QC 20101015Available from: 2005-03-07 Created: 2005-03-07 Last updated: 2017-12-05Bibliographically approved
In thesis
1. Electronic materials: growth and characterisation
Open this publication in new window or tab >>Electronic materials: growth and characterisation
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. The life time of excited carriers is analysed by controlling over the time delay between pump and probe pulses. Experimental studies of the InSb(111) surface and comparison with a previously studied InSb(110) surface show electron excitations in the bulk region with a minor surface contribution. Time-resolved experiments of carrier dynamics at the polar InAs(111)A and InAs(111)B surfaces show about the same life time of excited carriers, while no populated states above the valence band maximum have been found at the InAs(111)A due to the charge removal. Surface intergap electron states have been found at the GaSb(001) surface located at ~250 meV above the valence band maximum. Angle-resolved experiments showed a strong confinement of this state at the centre of the surface Brillouin zone.

A new two dimensional angle-resolved multi-anode analyser for the femtosecond laser photoemission setup has been constructed. The analyser can resolve a cone opening angle of ~1º at a drift distance of ~0.5 m with an energy resolution of ~125 meV.

A continuous series of binary system SrTiO3–PbZr0.52Ti0.48O3 has been grown by pulsed laser deposition (PLD) on sapphire substrate with crystalline quality control by x-ray diffraction (XRD). The maximum tunability has been tailored to room temperature, where STO�PZT (71/29) composition shows superior performance. A PbZr0.52Ti0.48O3 thin film pressure sensor has been fabricated by PLD and characterised by XRD and electrical measurements. The piezoelectric constant was found to be ~20 % higher compared to the bulk ceramics. A ferroelectric thin film electro-optical cell Na0.5K0.5NbO3/La0.5Sr0.5CoO3 (NKN/LSCO) on sapphire has been fabricated by PLD. Refractive indices and electro-optical coefficient of the cell were characterised by prism coupling refractometry. The tunability of the PLD fabricated 2 μm slot NKN thin film interdigital capacitor has been found ~23 % at 40 V bias voltage and frequency 1 MHz.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. vii, 80 p.
Series
Trita-FYS, ISSN 0280-316X ; 3077
Keyword
Electrophysics, Photoemission, Ultra-short laser pulse, Thin film, Laser deposition, InSb, InAs, GaSb, Ferroelectrics, Elektrofysik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-144 (URN)91-7283-967-8 (ISBN)
Public defence
2005-03-18, Kollegiesalen, Valhallavägen 79, Stockholm, 10:15
Opponent
Supervisors
Note
QC 20101015Available from: 2005-03-07 Created: 2005-03-07 Last updated: 2010-10-15Bibliographically approved

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