Change search
ReferencesLink to record
Permanent link

Direct link
Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
Show others and affiliations
2014 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 120, 174-177 p.Article in journal (Refereed) Published
Abstract [en]

Change of contact resistivity (rho(c)) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal-semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current-voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance-voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease of rho(c). A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed.

Place, publisher, year, edition, pages
2014. Vol. 120, 174-177 p.
Keyword [en]
Contact resistivity, Dopant segregation, PtSi, Schottky barrier height, Silicide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-147424DOI: 10.1016/j.mee.2013.09.003ISI: 000336697300029ScopusID: 2-s2.0-84898775183OAI: diva2:731154

QC 20140701

Available from: 2014-07-01 Created: 2014-06-27 Last updated: 2014-07-01Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Luo, JunÖstling, MikaelZhang, Shi-Li
By organisation
Integrated Devices and Circuits
In the same journal
Microelectronic Engineering
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 34 hits
ReferencesLink to record
Permanent link

Direct link