High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography
2014 (English)In: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XVI, 2014, 898904- p.Conference paper (Refereed)
A simple method of growing large areas of InP on Si through Epitaxial Lateral Overgrowth (ELOG) is presented. Isolated areas of high quality InP suitable for photonic integration are grown in deeply etched SiO2 mask fabricated using conventional optical lithography and reactive ion etching. This method is particularly attractive for monolithically integrating laser sources grown on InP with Si/SiO2 waveguide structure as the mask. The high optical quality of multi quantum well (MQW) layers grown on the ELOG layer is promisingly supportive of the feasibility of this method for mass production.
Place, publisher, year, edition, pages
2014. 898904- p.
, Proceedings of SPIE, ISSN 0277-786X ; 8989
InP on Si, Photonic Integration, ELOG
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-147760DOI: 10.1117/12.2039794ISI: 000336802200002ScopusID: 2-s2.0-84901706728ISBN: 978-0-8194-9902-8OAI: oai:DiVA.org:kth-147760DiVA: diva2:732248
Conference on Smart Photonic and Optoelectronic Integrated Circuits XVI, FEB 05-06, 2014, San Francisco, CA
QC 201407032014-07-032014-07-032014-10-10Bibliographically approved