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In situ manufacture of magnetic tunnel junctions by a direct-write process
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.ORCID iD: 0000-0003-4889-4210
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 22, 222401- p.Article in journal (Refereed) Published
Abstract [en]

In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

Place, publisher, year, edition, pages
2014. Vol. 104, no 22, 222401- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-147945DOI: 10.1063/1.4880728ISI: 000337161700037Scopus ID: 2-s2.0-84902456016OAI: oai:DiVA.org:kth-147945DiVA: diva2:734077
Funder
Swedish Research Council
Note

QC 20140714

Available from: 2014-07-14 Created: 2014-07-10 Last updated: 2017-12-05Bibliographically approved

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Belova, Lyubov M.

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