In situ manufacture of magnetic tunnel junctions by a direct-write process
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 22, 222401- p.Article in journal (Refereed) Published
In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.
Place, publisher, year, edition, pages
2014. Vol. 104, no 22, 222401- p.
IdentifiersURN: urn:nbn:se:kth:diva-147945DOI: 10.1063/1.4880728ISI: 000337161700037ScopusID: 2-s2.0-84902456016OAI: oai:DiVA.org:kth-147945DiVA: diva2:734077
FunderSwedish Research Council
QC 201407142014-07-142014-07-102014-07-14Bibliographically approved