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Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
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2001 (English)In: Applied Physics Letters, Vol. 79, no 12, 1885-1887 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2001. Vol. 79, no 12, 1885-1887 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-143795OAI: oai:DiVA.org:kth-143795DiVA: diva2:735630
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QC 20100525

NR 20140805Available from: 2014-07-29 Created: 2014-03-28 Last updated: 2014-07-29Bibliographically approved

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Sun, Y. T.

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