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Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP
2002 (English)In: Journal of Crystal Growth, Vol. 237, 1418-1422 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2002. Vol. 237, 1418-1422 p.
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Condensed Matter Physics
URN: urn:nbn:se:kth:diva-143794OAI: diva2:735632

QC 20100525

NR 20140805Available from: 2014-07-29 Created: 2014-03-28 Last updated: 2014-07-29Bibliographically approved

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Sun, Y. T.
Condensed Matter Physics

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