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Simulation of DC and RF Performance of the Graphene Base Transistor
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2014 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 61, no 7, 2570-2576 p.Article in journal (Refereed) Published
Abstract [en]

We examined the DC and RF performance of the graphene base transistor (GBT) in the ideal limit of unity common base current gain. To this purpose, we developed a model to calculate the current-voltage characteristics of GBTs with semiconductor or metal emitter taking into account space charge effects in the emitter-base and base-collector dielectrics that distort the potential profile and limit the upper value of f(T). Model predictions are compared with available experiments. We show that, in spite of space charge high current effects, optimized GBT designs still hold the promise to achieve intrinsic cutoff frequency in the terahertz region, provided that an appropriate set of dielectric and emitter materials is chosen.

Place, publisher, year, edition, pages
2014. Vol. 61, no 7, 2570-2576 p.
Keyword [en]
Graphene, modeling, RF performance
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-148368DOI: 10.1109/TED.2014.2325613ISI: 000338027200050Scopus ID: 2-s2.0-84903189344OAI: oai:DiVA.org:kth-148368DiVA: diva2:736219
Funder
EU, FP7, Seventh Framework Programme, 317839
Note

QC 20140805

Available from: 2014-08-05 Created: 2014-08-05 Last updated: 2017-12-05Bibliographically approved

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Vaziri, Sam

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