Simulation of DC and RF Performance of the Graphene Base Transistor
2014 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 61, no 7, 2570-2576 p.Article in journal (Refereed) Published
We examined the DC and RF performance of the graphene base transistor (GBT) in the ideal limit of unity common base current gain. To this purpose, we developed a model to calculate the current-voltage characteristics of GBTs with semiconductor or metal emitter taking into account space charge effects in the emitter-base and base-collector dielectrics that distort the potential profile and limit the upper value of f(T). Model predictions are compared with available experiments. We show that, in spite of space charge high current effects, optimized GBT designs still hold the promise to achieve intrinsic cutoff frequency in the terahertz region, provided that an appropriate set of dielectric and emitter materials is chosen.
Place, publisher, year, edition, pages
2014. Vol. 61, no 7, 2570-2576 p.
Graphene, modeling, RF performance
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-148368DOI: 10.1109/TED.2014.2325613ISI: 000338027200050ScopusID: 2-s2.0-84903189344OAI: oai:DiVA.org:kth-148368DiVA: diva2:736219
FunderEU, FP7, Seventh Framework Programme, 317839
QC 201408052014-08-052014-08-052014-08-05Bibliographically approved