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Passivation of SiC device surfaces by aluminum oxide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, E-ISSN 1757-899X, Vol. 56, no 1, 012007- p.Article in journal (Refereed) Published
Abstract [en]

A steady improvement in material quality and process technology has made electronic silicon carbide devices commercially available. Both rectifying and switched devices can today be purchased from several vendors. This successful SiC development over the last 25 years can also be utilized for other types of devices, such as light emitting and photovoltaic devices, however, there are still critical problems related to material properties and reliability that need to be addressed. This contribution will focus on surface passivation of SiC devices. This issue is of utmost importance for further development of SiC MOSFETs, which so far has been limited by reliability and low charge carrier surface mobilities. Also bipolar devices, such as BJTs, LEDs, or PV devices will benefit from more efficient and reliable surface passivation techniques in order to maintain long charge carrier lifetimes. Silicon carbide material enables the devices to operate at higher electric fields, higher temperatures and in more radiation dense applications than silicon devices. To be able to utilize the full potential of the SiC material, it is therefore necessary to develop passivation layers that can sustain these more demanding operation conditions. In this presentation it will also be shown that passivation layers of Al2O3 deposited by atomic layer deposition have shown superior radiation hardness properties compared to traditional SiO2-based passivation layers.

Place, publisher, year, edition, pages
2014. Vol. 56, no 1, 012007- p.
Keyword [en]
Atomic layer deposition, Charge carriers, Electric fields, Energy gap, Light emission, Materials, Passivation, Silicon carbide, Solar cells, Operation conditions, Passivation layer, Photovoltaic devices, Process Technologies, Radiation hardness, Silicon carbide devices, Silicon carbide materials, Surface passivation
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-148182DOI: 10.1088/1757-899X/56/1/012007ISI: 000338125900007ScopusID: 2-s2.0-84902166616OAI: diva2:736681
Symposium G on Alternative Approaches of SiC and Related Wide Bandgap Materials in Light Emitting and Solar Cell Applicationsheld at the E-MRS Spring Meeting, May 27-31, 2013, Strasbourg, France

QC 20140808

Available from: 2014-08-08 Created: 2014-08-04 Last updated: 2014-08-08Bibliographically approved

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Hallén, AndersSuvanam, Sethu SavedaHenkel, ChristophMartin, David M.Linnarsson, Margareta K.
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