PECVD technology for low temperature fabrication of silica-on-silicon based channel waveguides and devices
2000 (English)In: Proceedings of SPIE, the International Society for Optical Engineering, ISSN 0277-786X, Vol. 4087, 503-507 p.Article in journal (Refereed) Published
Silicabased planar technology on silicon has been identified as avery serious source of devices for optical communications:ystems. Low temperaturefabrication of passive and active structures is of special interestas it allows monolithicintegration with temperature sensitive semiconductor components ona common silicon platform.Standard PEC\'D (Plasma Enhanced Chemical Vapour Deposition)processing for fabrication of silica based opticalwaveguides has been investigatedto optimize the process parameters. We chose a high powerprocess regime with highratio between nitrous oxide and silane gasflows as the best conditions. Significant improvement in optical propertiesofsilica-on-silicon planar waveguides for optical communication in the 1.50 -1.55 tmwavelength range has been obtained.
Place, publisher, year, edition, pages
2000. Vol. 4087, 503-507 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-4993DOI: 10.1117/12.406444ScopusID: 2-s2.0-84875459700OAI: oai:DiVA.org:kth-4993DiVA: diva2:7370
QC 201412092005-03-102005-03-102014-12-09Bibliographically approved