Material consideration for integrated optics in silica-on-silicon technology
2003 (English)In: Proceedings volumes / Electrochemical society, ISSN 0161-6374, Vol. 1, 130-144 p.Article in journal (Refereed) Published
In this paper we present guidelines for optimization of process parameters for low temperature deposition of silica films for optical applications. The fabrication of optical integrated circuits based on silica deposition on silicon substrates with plasma enhanced CVD introduces different challenges in this technology, with respect to its traditional application in the field of microelectronics. The thick layers required, make deposition rate a very important parameter of merit. High accuracy of this thickness and refractive index as well as their uniformity over large area of the wafer are also very important for the functionality of the fabricated devices. Finally low processing temperature is essential as it allows monolithic integration with temperature sensitive semiconductor components. In this study a commercial parallel plate reactor has been used and the deposition parameters have been analysed to determine the process window, which allows fulfilling all these demands, so as to make a subsequent high temperature consolidation step not necessary.
Place, publisher, year, edition, pages
2003. Vol. 1, 130-144 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-4994OAI: oai:DiVA.org:kth-4994DiVA: diva2:7371
QC 201010042005-03-102005-03-102010-10-04Bibliographically approved