A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology
2014 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 35, no 7, 693-695 p.Article in journal (Refereed) Published
A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25 degrees C to 500 degrees C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25 degrees C to 410 kHz at 500 degrees C. The opamp achieves 1.46 V/mu s slew rate and 0.25% total harmonic distortion. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.
Place, publisher, year, edition, pages
IEEE , 2014. Vol. 35, no 7, 693-695 p.
Bipolar integrated circuits (ICs), high temperature ICs, negative feedback, operational amplifiers
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-148621DOI: 10.1109/LED.2014.2322335ISI: 000338662100002ScopusID: 2-s2.0-84903698786OAI: oai:DiVA.org:kth-148621DiVA: diva2:737280
FunderSwedish Foundation for Strategic Research
QC 201408122014-08-122014-08-112016-05-03Bibliographically approved