Photosensitivity of boron-codoped PECVD films in application to grating assisted WDM devices
2004 (English)In: INTEGRATED OPTICS AND PHOTONIC INTEGRATED CIRCUITS / [ed] Righini, GC; Honkanen, S, BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004, Vol. 5451, 191-198 p.Conference paper (Refereed)
UV sensitivity of B-Ge codoped cores in PECVD silica waveguides has been investigated. Photoinduced refractive index changes have been introduced by KrF excimer laser irradiation at 248 rim, without any presensitization method. The effects of B codoping of Ge doped silica have been examined. It has been shown that B addition mildly increases glass network disorder, by broadening the O bridging angle distribution as from FTIR measurements, but on the other hand it does not produce point defects which may contribute to the absorption band at 5eV already generated by the presence of Ge doping. The fabricated channel waveguides show low optical loss even without high temperature annealing. Strong Bragg gratings imprinted into these waveguides confirm that in non thermally annealed Ge doped PECVD silica glass, where a small absorption band still exist at 5eV, B codoping supplies sufficient photosensitivity amplification to make hydrogen loading unnecessary.
Place, publisher, year, edition, pages
BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004. Vol. 5451, 191-198 p.
, PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 5451
photosensitivity, Bragg gratings, silica-on-silicon technology, planar lightwave circuit (PLC), boron codoping, PECVD fabrication
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-4998DOI: 10.1117/12.545813ISI: 000223995500022ScopusID: 2-s2.0-12344253989ISBN: 0-8194-5374-9OAI: oai:DiVA.org:kth-4998DiVA: diva2:7375
Conference Optics and Photonic Integrated Circuits. Strasbourg, FRANCE. APR 27-29, 2004
QC 20101004 QC 201110252005-03-102005-03-102011-11-01Bibliographically approved