High performance 1.55μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror
2004 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 40, no 12, 734-735 p.Article in journal (Refereed) Published
1.55 μm room-temperature continuous-wave operation of a high performance optically pumped vertical external cavity surface emitting laser is reported. The structure includes an active region with strain compensated quantum wells, and a broadband SiNx/Si/Au Bragg reflector transferred on an Si substrate by Au/In dry bonding. Output power of up to 45 mW is achieved at 0°C, and continuous-wave operation is observed up to 45°C.
Place, publisher, year, edition, pages
2004. Vol. 40, no 12, 734-735 p.
Dielectric devices, Heat resistance, Mirrors, Optical pumping, Semiconductor lasers, Semiconductor quantum wells, Silicon, Substrates, Silicon substrates, Vertical extended-cavity surface-emitting lasers (VECSEL)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5001DOI: 10.1049/el:20040535ISI: 000222386200016ScopusID: 2-s2.0-3042643202OAI: oai:DiVA.org:kth-5001DiVA: diva2:7378
QC 201010042005-03-102005-03-102010-10-04Bibliographically approved