Silicon nanowires integrated with CMOS circuits for biosensing application
2014 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 98, 26-31 p.Article in journal (Refereed) Published
We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of N by N pixel matrix (N-2 pixels or test sites) and 8 input-output (I/O) pins. In each pixel a single crystalline SiNW with 75 by 20 nm cross-section area is defined using sidewall transfer lithography in the SOI layer. The key advantage of the design is that each individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases.
Place, publisher, year, edition, pages
2014. Vol. 98, 26-31 p.
Nanowire, Biosensing, SOI, CMOS, STL
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-149200DOI: 10.1016/j.sse.2014.04.005ISI: 000339149000006ScopusID: 2-s2.0-84902251547OAI: oai:DiVA.org:kth-149200DiVA: diva2:738442
FunderEU, European Research Council, 228229
QC 201408182014-08-182014-08-182014-08-18Bibliographically approved