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Silicon nanowires integrated with CMOS circuits for biosensing application
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-9690-2292
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0568-0984
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2014 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 98, 26-31 p.Article in journal (Refereed) Published
Abstract [en]

We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of N by N pixel matrix (N-2 pixels or test sites) and 8 input-output (I/O) pins. In each pixel a single crystalline SiNW with 75 by 20 nm cross-section area is defined using sidewall transfer lithography in the SOI layer. The key advantage of the design is that each individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases.

Place, publisher, year, edition, pages
2014. Vol. 98, 26-31 p.
Keyword [en]
Nanowire, Biosensing, SOI, CMOS, STL
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-149200DOI: 10.1016/j.sse.2014.04.005ISI: 000339149000006Scopus ID: 2-s2.0-84902251547OAI: oai:DiVA.org:kth-149200DiVA: diva2:738442
Funder
EU, European Research Council, 228229
Note

QC 20140818

Available from: 2014-08-18 Created: 2014-08-18 Last updated: 2017-12-05Bibliographically approved

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Jayakumar, GaneshHellström, Per-ErikGaridis, Konstantinos

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