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RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2014 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 332, 172-175 p.Article in journal (Refereed) Published
Abstract [en]

Electrical isolation of InAs/AlSb high electron mobility transistors has been achieved by the ion implantation isolation technique. The multilayered structures are grown by molecular beam epitaxy on GaAs substrates. The optimal isolation is provided by damaging patterned areas by 100 keV Ar ions implanted at room temperature using fluence of 2 x 10(15) cm(-2), and then annealing the samples in 365 degrees C for 30 min. The damage build-up and annealing is studied by channeling Rutherford backscattering spectrometry (RBS) and compared to sheet resistance measurements. Only a low level of damage annealing can be seen in RBS for the post-implant annealed samples, but for Ar fluence higher than 2 x 10(14) cm(-2), a strong electrical resistivity increase can still be achieved.

Place, publisher, year, edition, pages
2014. Vol. 332, 172-175 p.
Keyword [en]
Implantation isolation, Annealing, RBS, Sheet resistance
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Identifiers
URN: urn:nbn:se:kth:diva-149192DOI: 10.1016/j.nimb.2014.02.055ISI: 000339131200039Scopus ID: 2-s2.0-84902544229OAI: oai:DiVA.org:kth-149192DiVA: diva2:738525
Conference
21st International Conference on Ion Beam Analysis (IBA), JUN 23-28, 2013, Seattle, WA, United States
Note

QC 20140818

Available from: 2014-08-18 Created: 2014-08-18 Last updated: 2017-12-05Bibliographically approved

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Hallén, Anders

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