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ToF-MEIS stopping measurements in thin SiC films
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8774-9302
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2014 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 332, 130-133 p.Article in journal (Refereed) Published
Abstract [en]

Electronic stopping in thin, amorphous, SiC films has been studied by time-of-flight medium energy ion scattering and conventional Rutherford backscattering spectrometry. Amorphous SiC films (8, 21 and 36 nm) were prepared by laser ablation using a single crystalline silicon carbide target. Two kinds of substrate films, one with a lower atomic mass (carbon) and one with higher atomic mass (iridium) compared to silicon has been used. Monte Carlo simulations have been used to evaluate electronic stopping from the shift in energy for the signal scattered from Ir with and without SiC. The two kinds of samples are used to illustrate the strength and challenges for ToF-MEIS compared to conventional RBS.

Place, publisher, year, edition, pages
2014. Vol. 332, 130-133 p.
Keyword [en]
SiC, MEIS, RBS, Electronic stopping cross section
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Identifiers
URN: urn:nbn:se:kth:diva-149191DOI: 10.1016/j.nimb.2014.02.045ISI: 000339131200029Scopus ID: 2-s2.0-84902536631OAI: oai:DiVA.org:kth-149191DiVA: diva2:738576
Conference
21st International Conference on Ion Beam Analysis (IBA), JUN 23-28, 2013, Seattle, WA, United States
Note

QC 20140818

Available from: 2014-08-18 Created: 2014-08-18 Last updated: 2017-12-05Bibliographically approved

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Linnarsson, Margareta K.Khartsev, SergiyHallén, Anders

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