Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 10, 5129-5135 p.Article in journal (Refereed) Published
A circuit solution to the normally-ON property of the normally-ON silicon carbide junction field-effect transistor, namely the self-powered gate driver, has been recently proposed. This letter sheds some light on the design process of the self-powered gate driver concept as well as limitations from the system perspective. It is experimentally shown that the parameters of the self-powered gate driver must be chosen taking into account a tradeoff between a fast response and stable operation of the driver. Moreover, the influence of the shoot-through current in the fast activation of the self-powered gate driver is also presented.
Place, publisher, year, edition, pages
2014. Vol. 29, no 10, 5129-5135 p.
Gate drivers, normally-ON silicon carbide junction field-effect transistor, protection circuit
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-149493DOI: 10.1109/TPEL.2014.2320360ISI: 000339618500010ScopusID: 2-s2.0-84902203816OAI: oai:DiVA.org:kth-149493DiVA: diva2:740101
QC 201408222014-08-222014-08-222014-08-22Bibliographically approved