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Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 10, 5129-5135 p.Article in journal (Refereed) Published
Abstract [en]

A circuit solution to the normally-ON property of the normally-ON silicon carbide junction field-effect transistor, namely the self-powered gate driver, has been recently proposed. This letter sheds some light on the design process of the self-powered gate driver concept as well as limitations from the system perspective. It is experimentally shown that the parameters of the self-powered gate driver must be chosen taking into account a tradeoff between a fast response and stable operation of the driver. Moreover, the influence of the shoot-through current in the fast activation of the self-powered gate driver is also presented.

Place, publisher, year, edition, pages
2014. Vol. 29, no 10, 5129-5135 p.
Keyword [en]
Gate drivers, normally-ON silicon carbide junction field-effect transistor, protection circuit
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-149493DOI: 10.1109/TPEL.2014.2320360ISI: 000339618500010Scopus ID: 2-s2.0-84902203816OAI: oai:DiVA.org:kth-149493DiVA: diva2:740101
Note

QC 20140822

Available from: 2014-08-22 Created: 2014-08-22 Last updated: 2017-12-05Bibliographically approved

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Nee, Hans-Peter

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