Analytical electro-thermal model for RF-LDMOSFET
2010 (English)In: Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, ISSN 1000-3819, Vol. 30, no 3, 370-376+424 p.Article in journal (Refereed) Published
This paper presents the model development of Agere eletro-thermal transistor, an electro-thermal large signal nonlinear RF-LDMOSFET model used in radio frequency (RF) power amplifiers (PAs). We first describe our model schematics, then the iso-thermal and pulsed device characterization systems used in the parametrization of the model are described. The extracted model is implemented in Agilent's Advanced Design System (ADS) for the development of several PAs. Finally, the model accuracy is measured by comparing several experimental verifications of physical chips against those of EDA designs.
Place, publisher, year, edition, pages
2010. Vol. 30, no 3, 370-376+424 p.
Analytical model, LDMOSFET, Package model, Thermal model, Transistor model
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-149601ScopusID: 2-s2.0-78049265816OAI: oai:DiVA.org:kth-149601DiVA: diva2:740507
QC 201408252014-08-252014-08-252014-08-25Bibliographically approved