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Analytical electro-thermal model for RF-LDMOSFET
KTH, School of Information and Communication Technology (ICT), Electronic Systems.
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2010 (English)In: Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, ISSN 1000-3819, Vol. 30, no 3, 370-376+424 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents the model development of Agere eletro-thermal transistor, an electro-thermal large signal nonlinear RF-LDMOSFET model used in radio frequency (RF) power amplifiers (PAs). We first describe our model schematics, then the iso-thermal and pulsed device characterization systems used in the parametrization of the model are described. The extracted model is implemented in Agilent's Advanced Design System (ADS) for the development of several PAs. Finally, the model accuracy is measured by comparing several experimental verifications of physical chips against those of EDA designs.

Place, publisher, year, edition, pages
2010. Vol. 30, no 3, 370-376+424 p.
Keyword [en]
Analytical model, LDMOSFET, Package model, Thermal model, Transistor model
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-149601Scopus ID: 2-s2.0-78049265816OAI: oai:DiVA.org:kth-149601DiVA: diva2:740507
Note

QC 20140825

Available from: 2014-08-25 Created: 2014-08-25 Last updated: 2014-08-25Bibliographically approved

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