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Combined Si Schottky barriers and SiGe/Si multi quantum wells for infrared detection
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2011 (English)In: Int. Semicond. Device Res. Symp., ISDRS, 2011Conference paper, Published paper (Refereed)
Abstract [en]

Un-cooled bolometer arrays have been considered as good choices for detection of infrared waves in the ranges of 3-5m (MWIR: mid wavelength infrared) and 8-12m (LWIR: long wavelength infrared). Advantages are found in their relative simplicity of mechanism and design, hence, fabrication cost, when compared to detectors working based on photon detection mechanisms. A temperature dependent resistor (or thermistor) is the core element of a bolometer. The rate of resistance dependency to temperature is a figure-of-merit for thermistor material, acting as the active element in a bolometer. This property is characterized by temperature coefficient of resistance (TCR). At the same time, for the better IR detection and imaging quality, high signal-to-noise ratio (SNR) is also sought. Different materials have been proposed and/or implemented commercially to work as thermistor materials. Among them are VOx, amorphous silicon, amorphous and poly SiGe.

Place, publisher, year, edition, pages
2011.
Keyword [en]
Active elements, Bolometer array, Core elements, Fabrication cost, High signal-to-noise ratio, Imaging quality, Infrared detection, Long-wavelength infrared, Mid-wavelength infrared, Multi quantum wells, Photon detection, Poly-SiGe, Schottky barriers, SiGe/Si, Temperature coefficient of resistance, Temperature dependent, Thermistor materials, Bolometers, Detectors, Fading (radio), Infrared detectors, Schottky barrier diodes, Thermistors, Infrared radiation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-149927DOI: 10.1109/ISDRS.2011.6135241Scopus ID: 2-s2.0-84857211827ISBN: 9781457717550 (print)OAI: oai:DiVA.org:kth-149927DiVA: diva2:741764
Conference
2011 International Semiconductor Device Research Symposium, ISDRS 2011, 7 December 2011 through 9 December 2011, College Park, MD
Note

QC 20140829

Available from: 2014-08-29 Created: 2014-08-28 Last updated: 2014-08-29Bibliographically approved

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