Integration of metallic source/drain (MSD) contacts in nanoscaled CMOS technology
2010 (English)In: ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, 41-45 p.Conference paper (Refereed)
An overview of metallic source/drain (MSD) contacts in nanoscaled MOSFET technology is provided in this paper. MSD contacts offer several benefits for nanoscaled CMOS, i.e., extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. In order to achieve high performance MSD MOSFETs, many design parameters such as Schottky barrier height (SBH), S/D to gate underlap, top Si layer thickness, oxide thickness and so on should be optimized. Recently, a lot of efforts have been invested in MSD MOSFETs based on Pt- and Ni-silicide implementation and several promising results have been reported in literature. The experimental work as well as the results of Monte Carlo simulations by this research team and by other research teams is discussed in this paper. It will be shown that the present results place MSD MOSFETs as a competitive candidate for future generations of CMOS technology.
Place, publisher, year, edition, pages
2010. 41-45 p.
CMOS technology, Design parameters, Experimental works, Future generations, Gate underlap, Low temperature processing, Monte Carlo Simulation, MOS-FET, MOSFETs, Nanoscaled, Ni-silicide, Oxide thickness, Parasitic resistances, Research teams, Schottky barrier heights, Si layer
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-150072DOI: 10.1109/ICSICT.2010.5667860ScopusID: 2-s2.0-78751499473ISBN: 978-142445798-4OAI: oai:DiVA.org:kth-150072DiVA: diva2:741958
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 1 November 2010 through 4 November 2010, Shanghai, China
QC 201408292014-08-292014-08-292014-08-29Bibliographically approved