Internal stress in freestanding 3C-SiC grown on Si and relation to carrier lifetime
2010 (English)In: 2010 Wide Bandgap Cubic Semiconductors: From Growth To Devices, American Institute of Physics (AIP), 2010, 91-94 p.Conference paper (Refereed)
Residual stress and carrier lifetime variation have been measured in free-standing n-type 3C-SiC wafer grown on undulated Si substrate. We identify extended regions of residual stress that lie parallel to epilayer surfaces. The opposite polarity of stress is identified toward the interface and toward the top surface. Integrated carrier lifetime has been determined by random defect density distribution which is enhanced in the areas of double-positioning boundary defects. It is shown that carrier lifetimes are severely reduced by the presence of residual stress towards epilayer surfaces. In this way lifetime depth-distribution can be mistakenly attributed to enhanced surface recombination.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2010. 91-94 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 1292
Defects, Lifetime, Recombination, Stress
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-150020DOI: 10.1063/1.3518320ISI: 000286950900023ScopusID: 2-s2.0-78651293664ISBN: 9780735408470OAI: oai:DiVA.org:kth-150020DiVA: diva2:742368
E-MRS Symposium F on 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices, 8 June 2010 through 10 June 2010, Strasbourg, France
QC 201409012014-09-012014-08-292014-09-01Bibliographically approved