High Zn content single-phase RS-MgZnO suitable for solar-blind frequency applications
2010 (English)In: 2010 Wide Bandgap Cubic Semiconductors: From Growth To Devices, American Institute of Physics (AIP), 2010, 185-190 p.Conference paper (Refereed)
Single-phase rock-salt MgZnO films with high Zn content were successfully fabricated on the templates of MgO (111)/α-sapphire (0001) by radio-frequency plasma assisted molecular beam epitaxy. The influence of growth temperature on epitaxy of MgZnO alloy films was investigated by the combined studies of crystal structures, compositions, and optical properties. It is found that the incorporation of Zn atoms into the rock-salt MgZnO films is greatly enhanced at low temperature, confirmed by in-situ reflection high-energy electron diffraction observations and ex-situ X-ray diffraction characterization. Zn fraction in the single-phase rock-salt Mg 0.53Zn0.47O film was determined by Rutherford backscattering spectrometry. Optical properties of the films were investigated by transmittance spectroscopy and reflectance spectroscopy, both of which demonstrate the solar-blind band gap and its dependence on Zn content.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2010. 185-190 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 1292
Molecular beam epitaxy, Rock-salt MgZnO, Rutherford backscattering, Single phase, Solar-blind
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-150002DOI: 10.1063/1.3518292ISI: 000286950900045ScopusID: 2-s2.0-78651280525ISBN: 978-0-7354-0847-0OAI: oai:DiVA.org:kth-150002DiVA: diva2:744002
E-MRS Symposium F on 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices, 8 June 2010 through 10 June 2010, Strasbourg, France
QC 2015409052014-09-052014-08-292014-09-05Bibliographically approved