Diode based charge pump design using 0.35μm technology
2010 (English)In: 28th Norchip Conference, NORCHIP 2010, IEEE , 2010, 5669437- p.Conference paper (Refereed)
A high voltage charge pump design is being presented in this paper. The design is based on Dickson charge pump, constructed with diodes by using AMS 0.35μm technology. The innovation is made in Dickson charge pump i.e. charge control PMOS transistor is used in each stage of charge pump. PMOS transistor is used in series with charging capacitor which reduces the power consumption during the clock transition by controlling the time constant of each stage. The resistance between drain to source of PMOS transistor increases the time constant during the charging of the capacitor placed in each stage of charge pump. The output voltage of about 5.693V is achieved by the six stages of Dickson charge pump at no-load which reduces to 5.537V with the six stages of proposed charge pump but the power during the input clock transition is reduced from 340.5μw (consumed by Dickson charge pump) to 28.85 μW (consumed by the proposed modified charge pump). Some other results are also discussed in this paper, which are achieved on different load resistances.
Place, publisher, year, edition, pages
IEEE , 2010. 5669437- p.
Charge pump, Component high voltage DC output, DC-DC converter, Dickson charge pump, input clock transition, Diode based charge pump
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-150085DOI: 10.1109/NORCHIP.2010.5669437ScopusID: 2-s2.0-78751509649ISBN: 978-142448973-2OAI: oai:DiVA.org:kth-150085DiVA: diva2:744278
28th Norchip Conference, NORCHIP 2010, 15 November 2010 through 16 November 2010, Tampere, Finland
CQC 201409082014-09-082014-08-292014-09-08Bibliographically approved