Silicon carbide bipolar power devices
2011 (English)In: ECS Transactions, 2011, no 8, 189-200 p.Conference paper (Refereed)
This paper reviews the current state of the art in active switching device performance for SiC BJTs. In addition, some results from simulations are shown with particular attention on temperature and design dependence of the current gain. A design to improve conductivity modulation is also suggested. Finally, performance of a 2.8 kV BJT are illustrated. This device demonstrates high current gain of 52, low on-resistance of 6.8 mΩcm 2, fast switching, and no bipolar degradation.
Place, publisher, year, edition, pages
2011. no 8, 189-200 p.
, ECS Transactions, ISSN 1938-5862 ; 41
Conductivity modulation, Current gains, Fast switching, High current gain, On-resistance, Power devices, State of the art, Switching devices, Bipolar transistors, Gallium nitride, Silicon carbide
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-150634DOI: 10.1149/1.3631497ISI: 000309600300018ScopusID: 2-s2.0-84857295490ISBN: 9781566779081OAI: oai:DiVA.org:kth-150634DiVA: diva2:744850
Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting, 9 October 2011 through 14 October 2011, Boston, MA
QC 201409082014-09-082014-09-082014-09-23Bibliographically approved