Fundamental band edge absorption in 3C-SiC: Phonon absorption assisted transitions
2010 (English)In: Silicon Carbide and Related Materials 2009, Pts 1 and 2, Trans Tech Publications Inc., 2010, 231-234 p.Conference paper (Refereed)
An alternative approach based on non-equilibrium free-carrier density measurements was used to characterize the fundamental absorption edge of 3C-SiC at room and 77 K temperatures. At 77 K temperature the extracted absorption edge compared well to the previous literature data revealing characteristic thresholds due to the phonon emission assisted transitions. At room temperature the absorption tail due to the phonon absorption assisted transition was revealed up to the value of 0.01cm-1 exceeding the previous 5 cm -1 limit induced by unintentional sample doping.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2010. 231-234 p.
, Materials Science Forum, ISSN 0255-5476 ; 645-648
Free carrier absorption, Indirect band gap absorption, Unintentional doping
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-149611DOI: 10.4028/www.scientific.net/MSF.645-648.231ISI: 000279657600054ScopusID: 2-s2.0-77955443036ISBN: 0878492798ISBN: 978-087849279-4OAI: oai:DiVA.org:kth-149611DiVA: diva2:745704
13th International Conference on Silicon Carbide and Related Materials, 11 October 2009 through 16 October 2009, Nurnberg, Germany
QC 201409112014-09-112014-08-252014-09-11Bibliographically approved