The effect of oxygen partial pressure during deposition in the magnetic properties of ZnO thin film
2011 (English)In: Mater Res Soc Symp Proc, 2011, 117-122 p.Conference paper (Refereed)
We have studied the magnetic properties of 100 nm thick ZnO thin films prepared by magnetron sputtering in different oxygen partial pressures (ratio of oxygen pressure to total pressure in deposition chamber, P Oxy). Only the films fabricated at P Oxy below ∼ 0.5 show room temperature ferromagnetism. The saturation magnetization at room temperature is initially found to increase as P Oxy increases and reaches maximum value of ∼ 5 emu/gm at P Oxy ∼ 0.3 and then starts to decrease and becomes diamagnetic for P Oxy > 0.5. From small angle XRD study of structural properties of the films, we find that the lattice stress developed in the film along c-axis also exhibits a similar behavior with the variation of P Oxy. Thus, both the room temperature ferromagnetism and lattice stress appear to originate from the intrinsic defects present in the sample.
Place, publisher, year, edition, pages
2011. 117-122 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1292
Deposition chambers, Effect of oxygen, Intrinsic defects, Lattice stress, Maximum values, Oxygen partial pressure, Oxygen pressure, Room temperature, Room temperature ferromagnetism, Total pressure, XRD studies, ZnO thin film, Deposition, Ferromagnetism, Magnetic properties, Metallic films, Optical films, Oxide films, Oxygen, Partial pressure, Pressure effects, Saturation magnetization, Thin films, Vapor deposition, Zinc oxide, Magnetic thick films
Materials Engineering Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-150741DOI: 10.1557/opl.2011.22ScopusID: 2-s2.0-80053191847ISBN: 9781605112695OAI: oai:DiVA.org:kth-150741DiVA: diva2:745755
2010 MRS Fall Meeting, 29 November 2010 through 3 December 2010, Boston, MA
QC 201409112014-09-112014-09-092014-09-11Bibliographically approved