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Graphene directly grown on SiO2-based insulators
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2011 (English)In: IEEE - Semicond. Conf. Dresden: Technol., Des., Packag., Simul. Test, SCD - Int. Conf., Workshop Table-Top Exhibit., 2011Conference paper (Refereed)
Abstract [en]

Strong effort is devoted to grow graphene directly on insulators to create a technological step towards cost effective mass production of high-frequency transistors on Si. We have shown recently, that direct graphene growth can be achieved on silicate substrates by solid carbon source deposition. Here, we present a study on the growth of graphene on insulator by means of Raman and photoelectron spectroscopy, corroborated by density functional theory calculations. We address temperature dependence and the correlation between graphene quality and the number of layers. We show that this approach may open a pathway to Si-compatible graphene growth for electronic applications.

Place, publisher, year, edition, pages
, IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition
Keyword [en]
Cost effective, Density functional theory calculations, Electronic application, Graphene growth, High-frequency transistors, Number of layers, Silicate substrate, Solid carbon sources, Temperature dependence, Chip scale packages, Density functional theory, Photoelectron spectroscopy, Semiconducting silicon, Silicates, Graphene
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-150664DOI: 10.1109/SCD.2011.6068742ScopusID: 2-s2.0-82155163913ISBN: 9781457704291OAI: diva2:745914
2011 IEEE Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011, 27-28 September 2011, Dresden, Germany

QC 20140911

Available from: 2014-09-11 Created: 2014-09-08 Last updated: 2014-09-11Bibliographically approved

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Lemme, Max C.
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