A low cost multi quantum SiGe/Si/Schottky structure for high performance IR detectors
2011 (English)In: European Solid-State Device Res. Conf., 2011, 327-330 p.Conference paper (Refereed)
SiGe(C)/Si(C) multi quantum wells (MQWs) individually or in series with a Schottky diode (SQW) have been characterized as the thermistor materials for high performance bolometer application. The thermal response of the thermistor materials is expressed in temperature coefficient of resistance (TCR) and an excellent value of 6%/K is obtained for the SQWs. The noise power spectrum density was also measured and the K 1/f was estimated as low as 4.7×10 -14. The outstanding characteristics for the SQWs are due to low defect density and high interfacial quality in the multilayer structures. These results are very promising for the rising market of low cost IR detectors in the near future.
Place, publisher, year, edition, pages
2011. 327-330 p.
, European Solid-State Device Research Conference, ISSN 1930-8876
Interfacial qualities, Low costs, Low defect densities, Multi quantum wells, Multilayer structures, Noise power spectrum, Schottky diodes, Temperature coefficient of resistance, Thermal response, Thermistor materials, Defect density, Infrared detectors, Schottky barrier diodes, Semiconductor quantum wells, Thermistors, Quantum theory
IdentifiersURN: urn:nbn:se:kth:diva-150654DOI: 10.1109/ESSDERC.2011.6044168ScopusID: 2-s2.0-82955225217ISBN: 9781457707056OAI: oai:DiVA.org:kth-150654DiVA: diva2:746391
41st European Solid-State Device Research Conference, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland
QC 201409122014-09-122014-09-082014-09-12Bibliographically approved