Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
2011 (English)In: 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 2011, 87-93 p.Conference paper (Refereed)
The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.
Place, publisher, year, edition, pages
2011. 87-93 p.
, Advanced Materials Research, ISSN 10226680
Channel mobility, High-k oxide, Interface states density, LaLuO3, Lanthanum lutetium oxide, Molecular beam deposition MBD, MOSFET, SOI, Threshold voltage, Transconductance, High-k oxides, LaLuO3
, MOS-FET, Characterization, Chemical modification, Electric properties, Gates (transistor), Insulating materials, Lanthanum oxides, MOS capacitors, Semiconductor devices, MOSFET devices
IdentifiersURN: urn:nbn:se:kth:diva-151171DOI: 10.4028/www.scientific.net/AMR.276.87ISI: 000303285000010ScopusID: 2-s2.0-79960402662ISBN: 9783037851784OAI: oai:DiVA.org:kth-151171DiVA: diva2:747597
6th International Workshop on Semiconductor-on-Insulator Materials and Devices; Kyiv; Ukraine; 24-28 October 2010
QC 201409172014-09-172014-09-152014-09-17Bibliographically approved