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The role of oxygen in a large area of RF-powered atmospheric pressure dielectric barrier glow discharge plasma in sterilization
KTH, School of Electrical Engineering (EES), Space and Plasma Physics. KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.
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2011 (English)In: IEEE Transactions on Plasma Science, ISSN 0093-3813, Vol. 39, no 8, 1689-1694 p.Article in journal (Refereed) Published
Abstract [en]

A nonequilibrium Ar/O2 plasma at atmospheric pressure was generated between two parallel square electrodes by a 13.56-MHz power supplier. Experimental results demonstrate that the Ar/O2 plasma more effectively kills Staphylococcus aureus and Escherichia coli than the Ar plasma. When the O2 flow rate increases from 0 to 100 sccm step by step, the discharge voltage and the radio-frequency (RF) current always show sinusoidal waveforms, and the discharges maintain the α mode as well. In addition, the sterilization efficiency values of the RF-powered atmospheric pressure Ar/O2 plasma depend on the oxygen fraction in Ar gas. It is found that the sterilization efficiency of the Ar/O2 plasma is highest with 0.5 vol.% oxygen in argon gas, corresponding to the maximum production of O(3P) radicals. It is considered that the O(3P) radicals produced by the Ar/O2 plasma play a significant role in atmospheric plasma sterilization.

Place, publisher, year, edition, pages
2011. Vol. 39, no 8, 1689-1694 p.
Keyword [en]
Oxygen radicals, radio-frequency (RF)-powered atmospheric pressure plasma, sterilization mechanisms, Ar plasmas, Argon gas, Atmospheric plasmas, Dielectric-barrier glow discharges, Discharge voltages, Non equilibrium, Oxygen fractions, Oxygen radical, Power suppliers, Radio frequencies, Rate increase, Sinusoidal waveforms, Staphylococcus aureus, Step-by-step, Argon, Atmospheric pressure, Atmospherics, Bacteria, Escherichia coli, Glow discharges, Oxygen, Sterilization (cleaning), Plasmas
National Category
Fusion, Plasma and Space Physics
URN: urn:nbn:se:kth:diva-151169DOI: 10.1109/TPS.2011.2155104ISI: 000293754900009ScopusID: 2-s2.0-80051791435OAI: diva2:747620

QC 20140917

Available from: 2014-09-17 Created: 2014-09-15 Last updated: 2015-10-09Bibliographically approved

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Li, Bin
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