Study of the interface properties of TiO 2/SiO 2/SiC by photocapacitance
2011 (English)In: 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010, 2011, 350-353 p.Conference paper (Refereed)
We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500°C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the high temperature measurements.
Place, publisher, year, edition, pages
2011. 350-353 p.
, Materials Science Forum, ISSN 0255-5476 ; 679/680
High κ dielectric, Interface state density, Interface trap, Ledge, MISiC, Capacitance-voltage techniques, Elevated temperature, High temperature, High temperature measurement, Interface property, Interfacial traps, MIS structure, Oxide charge, Photo energy, Photocapacitance, Post deposition annealing, Real time measurements, TiO, Capacitance, Heterojunctions, Silicon carbide, Silicon oxides, Temperature measurement
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-151228DOI: 10.4028/www.scientific.net/MSF.679-680.350ISI: 000291673500083ScopusID: 2-s2.0-84953407994ISBN: 9783037850794OAI: oai:DiVA.org:kth-151228DiVA: diva2:747721
29 August 2010 through 2 September 2010, Oslo
QC 201409172014-09-172014-09-152014-09-17Bibliographically approved