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On the effective mass of holes in inversion layers
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2011 (English)In: International Conference on Ultimate Integration on Silicon, 2011, 50-53 p.Conference paper, Published paper (Refereed)
Abstract [en]

We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band kp model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.

Place, publisher, year, edition, pages
2011. 50-53 p.
Series
2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Keyword [en]
Effective mass, Inversion layer, KP models, MOSFETs, Silicon layer, Silicon-on-insulator devices, Semiconducting silicon compounds
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-151208DOI: 10.1109/ULIS.2011.5757950Scopus ID: 2-s2.0-79958018985ISBN: 9781457700903 (print)OAI: oai:DiVA.org:kth-151208DiVA: diva2:748418
Conference
2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, 14 March 2011 through 16 March 2011, Cork
Note

QC 20140919

Available from: 2014-09-19 Created: 2014-09-15 Last updated: 2014-09-19Bibliographically approved

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Hellström, Per -ErikMalm, Gunnar

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Hellström, Per -ErikMalm, GunnarÖstling, Mikael
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Citation style
  • apa
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  • nn-NB
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  • Other locale
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Output format
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  • asciidoc
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