On the effective mass of holes in inversion layers
2011 (English)In: International Conference on Ultimate Integration on Silicon, 2011, 50-53 p.Conference paper (Refereed)
We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band kp model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.
Place, publisher, year, edition, pages
2011. 50-53 p.
, 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Effective mass, Inversion layer, KP models, MOSFETs, Silicon layer, Silicon-on-insulator devices, Semiconducting silicon compounds
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-151208DOI: 10.1109/ULIS.2011.5757950ScopusID: 2-s2.0-79958018985ISBN: 9781457700903OAI: oai:DiVA.org:kth-151208DiVA: diva2:748418
2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, 14 March 2011 through 16 March 2011, Cork
QC 201409192014-09-192014-09-152014-09-19Bibliographically approved