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Optical spectroscopy of individual silicon nanocrystals
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-5260-5322
2008 (English)In: Silicon Nanophotonics: Basic Principles, Current Status and Perspectives, Pan Stanford Publishing, 2008, 179-209 p.Chapter in book (Other academic)
Abstract [en]

The available data on photoluminescence (PL) spectroscopy of single Si nanocrystals (Si-nc) is reviewed for two types of samples: (i) Regular matrices of Si pillars produced by electron-beam lithography, reactive ion etching and oxidation, (ii) grains of porous Si deposited onto a substrate from a diluted colloidal suspension. A wide-field imaging micro-spectroscope with detection by a CCD camera is used preferably to detect spectra, while a confocal microscope with singlephoton- counting detection is applied for detection of PL fluctuations, so called ON-OFF blinking. Cryogenic-temperature PL spectroscopy of Si-nc reveals atomic-like narrow lines that document an unexpectedly large contribution of zero-phonon transitions and also some lowfrequency phonon-replicas. The blinking photon-statistics indicates that the transition between bright and dark states of a Si-nc has character of a diffusion-controlled electron-transfer reaction where quenching occurs by Auger recombination. Finally we show that all published results indicate a common PL mechanism of Si-nc, largely insensitive to fabrication methods.

Place, publisher, year, edition, pages
Pan Stanford Publishing, 2008. 179-209 p.
National Category
Atom and Molecular Physics and Optics
URN: urn:nbn:se:kth:diva-152200DOI: 10.4032/9789814241137ISI: 000289066900008ScopusID: 2-s2.0-84880185309ISBN: 9789814241113 (ISBN)OAI: diva2:750524

QC 20140929

Available from: 2014-09-29 Created: 2014-09-23 Last updated: 2014-09-29Bibliographically approved

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Linnros, Jan T.
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Microelectronics and Applied Physics, MAP
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