Critical evaluation of scattering models within the full band monte carlo simulation framework
2005 (English)In: Recent Advances in Multidisciplinary Applied Physics: Proceedings of the First International Meeting on Applied Physics (APHYS-2003) October 13-18th 2003, Badajoz, Spain, Elsevier, 2005, 305-311 p.Conference paper (Refereed)
The full band Monte Carlo (MC) simulation framework is regarded as the most accurate method available to study high-field carrier transport in semiconductors. Its potential has been demonstrated in a large number of studies over the years. In this work we focus on how the quantum mechanical uncertainty at high scattering rates affects the validity of Fermi’s Golden Rule, which traditionally is the basis for the scattering handling in the MC method. Considering the uncertainty is important in for instance silicon carbide, which at moderate energies exhibits a scattering rate exceeding 1014 s- 1. The expression for time-dependent scattering rate is presented together with calculated rates for some initial states with acoustic as well as polar-optical phonon interaction. A first-order time-dependent algorithm for handling of scattering events in MC simulators is proposed.
Place, publisher, year, edition, pages
Elsevier, 2005. 305-311 p.
IdentifiersURN: urn:nbn:se:kth:diva-148479DOI: 10.1016/B978-008044648-6.50051-3ScopusID: 2-s2.0-84884828254ISBN: 978-008044648-6OAI: oai:DiVA.org:kth-148479DiVA: diva2:751041
First International Meeting on Applied Physics (APHYS-2003) October 13-18th 2003, Badajoz, Spain
QC 201409302014-09-302014-08-082014-09-30Bibliographically approved