Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers
2009 (English)In: ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, 2009, 101-104 p.Conference paper (Refereed)
This work presents thermal and electrical characterization of SiGe/Si multi-quantum wells (MQWs) with different layer profiles in complete bolometer structures. The thermal property of the bolometers was studied by measuring thermal coefficient of resistivity (TCR) through I-V curves for five temperatures (25, 40, 55, 80 and 100°C) and for four different pixel areas. The results show a strong dependency of TCR on the Si/SiGe layer thickness and the presence of dopant impurity in the MQW. The noise measurements of MQWs were performed carefully by eliminating all external contributions and the noise spectroscopy provided the noise characteristic parameters. The results demonstrate that the noise depends on the geometric size of the MQW and it increases with decreasing of the pixel area. The investigations show the noise level in the bolometer structures is sensitive to any dopant segregation from the contact layers.
Place, publisher, year, edition, pages
2009. 101-104 p.
Contact layers, Dopant impurities, Dopant segregation, Electrical characterization, Geometric sizes, I - V curve, Layer thickness, Multiquantum wells, Noise characteristic, Noise levels, Noise measurements, Noise spectroscopy, Si/SiGe, SiGe quantum wells, SiGe/Si, Strain balance, Thermal coefficients, Thermal properties, Bolometers, Electric reactors, Infrared detectors, Pixels, Signal to noise ratio, Thermal conductivity of solids, Thermodynamic properties, Semiconductor quantum wells
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-152736DOI: 10.1109/ESSDERC.2009.5331312ScopusID: 2-s2.0-72849130225ISBN: 978-142444353-6OAI: oai:DiVA.org:kth-152736DiVA: diva2:751523
39th European Solid-State Device Research Conference, ESSDERC 2009, 14 September 2009 through 18 September 2009, Athens, Greece
QC 201410012014-10-012014-10-012014-10-01Bibliographically approved