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A novel self-refreshable capacitorless DRAM cell
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2009 (English)In: ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, 2009, 113-116 p.Conference paper, Published paper (Refereed)
Abstract [en]

A novel DRAM cell based on floating gate (FG) concept is investigated. Compared to the conventional two-transistor FG DRAM cells, this new memory cell has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated diode and state "1" can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the nondestructive read are discussed.

Place, publisher, year, edition, pages
2009. 113-116 p.
Keyword [en]
Application feasibility, Capacitor-less, Device configurations, DRAM cells, Floating gates, Gated diodes, Memory cell, Non destructive, Write speed, Dynamic random access storage
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-152752DOI: 10.1109/ESSDERC.2009.5331545Scopus ID: 2-s2.0-72849123487ISBN: 978-142444353-6 (print)OAI: oai:DiVA.org:kth-152752DiVA: diva2:751794
Conference
39th European Solid-State Device Research Conference, ESSDERC 2009, 14 September 2009 through 18 September 2009, Athens, Greece
Note

QC 20141002

Available from: 2014-10-02 Created: 2014-10-01 Last updated: 2014-10-02Bibliographically approved

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