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Wave-function symmetry and the properties of shallow P donors in 4H SiC
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.ORCID iD: 0000-0002-9050-5445
2009 (English)In: Silicon Carbide and Related Materials 2007, Pts 1 and 2, Trans Tech Publications Inc., 2009, 445-448 p.Conference paper, Published paper (Refereed)
Abstract [en]

A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility of degenerate donor state for phosphorus substituting Si atom on hexagonal site. On the base of a simple model, it is shown that the experimental spectra also provide evidence in favor of this possibility. The possibility for violation of the Haynes rule in the case of phosphorus donors on the two inequivalent sites is indicated.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. 445-448 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 600-603
Keyword [en]
Selection rules, Shallow donors, Wave function symmetry
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-153614ISI: 000263555300106Scopus ID: 2-s2.0-84955485970OAI: oai:DiVA.org:kth-153614DiVA: diva2:752826
Conference
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan; 14 October 2007 through 19 October 2007
Note

QC 20141006

Available from: 2014-10-06 Created: 2014-10-06 Last updated: 2017-04-28Bibliographically approved

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Persson, Clas

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