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Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for "domain wall memristors"
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 6, 066813- p.Article in journal (Refereed) Published
Abstract [en]

Simple meso-scale capacitor structures have been made by incorporating thin (similar to 300 nm) single crystal lamellae of KTiOPO4 (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised "hot-spots," caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

Place, publisher, year, edition, pages
2014. Vol. 116, no 6, 066813- p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-153386DOI: 10.1063/1.4891347ISI: 000341179400091ScopusID: 2-s2.0-84906309203OAI: diva2:754100

QC 20141009

Available from: 2014-10-09 Created: 2014-10-03 Last updated: 2014-10-09Bibliographically approved

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Canalias, Carlota
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