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Bulk properties of InN films determined by experiments and theory
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. Environmental Remediation Materials Unit, National Institute for Materials Science, Japan .
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. Department of Physics, University of Oslo, Norway .
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2014 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 403, 124-127 p.Article in journal (Refereed) Published
Abstract [en]

Built properties of InN are determined by combining experimental and theoretical studies. In this work, we produced high quality InN film deposited on GaN templates by a modified ion beam assisted deposition technique confirmed by low temperature photoluminescence and absorption. The density of states, real and imaginary parts of the complex dielectric function and the absorption coefficient are calculated by means of first principles beyond density functional theory. The quasi particle aspect is described in the framework of a quasi particle method (the GW approximation). The calculated band gap energy is similar to 0.8 eV whereas significance in the optical absorption occurs at similar to 1.2 eV, which are consistent with both luminescence and absorption results. The Bethe-Salpeter equation is utilized to model the two particle exciton interactions, revealing a strong excitonic peak just below the absorption edge of InN.

Place, publisher, year, edition, pages
2014. Vol. 403, 124-127 p.
Keyword [en]
InN, Photoluminescence, Ion beam deposition, Density functional theory
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-153248DOI: 10.1016/j.jcrysgro.2014.06.001ISI: 000341412900023Scopus ID: 2-s2.0-84910033593OAI: oai:DiVA.org:kth-153248DiVA: diva2:754112
Note

QC 20141009

Available from: 2014-10-09 Created: 2014-10-03 Last updated: 2017-12-05Bibliographically approved

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