Wafer Scale Graphene Transfer for Back End of the Line Device Integration
2014 (English)In: INT CONF ULTI INTEGR, ISSN 2330-5738, 29-32 p.Article in journal (Refereed) Published
We report on a wafer scale fabrication of graphene based field effect transistors (GFETs) for use in future radio frequency (RF) and sensor applications. The process is also almost entirely CMOS compatible and uses a scalable graphene transfer method that can be incorporated in standard CMOS back end of the line (BEOL) process flows. Such a process can be used to integrate high speed GFET devices and graphene sensors with silicon CMOS circuits.
Place, publisher, year, edition, pages
2014. 29-32 p.
graphene, transistors, graphene transfer, wafer scale, GFET, more than Moore, Moore's Law
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-153862DOI: 10.1109/ULIS.2014.6813898ISI: 000341731300008ScopusID: 2-s2.0-84901344723OAI: oai:DiVA.org:kth-153862DiVA: diva2:754271
15th International Conference on Ultimate Integration on Silicon (ULIS), APR 07-09, 2014, Stockholm, SWEDEN
QC 201410102014-10-102014-10-092016-06-10Bibliographically approved