Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
New materials for post-Si computing
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2014 (English)In: MRS bulletin, ISSN 0883-7694, E-ISSN 1938-1425, Vol. 39, no 8, 658-662 p.Article in journal (Refereed) Published
Abstract [en]

It is now widely recognized that continued performance gains in electronic computing will require new materials, both in the short and long term. In the short term, the silicon channel in transistors will be replaced by materials with higher mobility that are easier to "scale" (make thinner). In data storage, the goal is to have fast, non-volatile memory with a smaller cell size. In the long term, new architectures and new types of logic devices will be needed in order to further reduce power consumption. New materials cannot only boost performance, but can also add new functionalities, such as on-chip photonics, which can vastly improve interchip interconnects. The need for new materials is a big opportunity for materials research, but also a challenge. Replacement technologies must outperform conventional silicon technology, but also be compatible with the vast infrastructure of silicon manufacturing. Examples of some of the materials advances in the areas of computation, memory, and communication are given in this issue of MRS Bulletin

Place, publisher, year, edition, pages
2014. Vol. 39, no 8, 658-662 p.
Keyword [en]
carbon, integration, silicon, devices, transistors, mosfets
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-153396DOI: 10.1557/mrs.2014.162ISI: 000341107900007Scopus ID: 2-s2.0-84925704051OAI: oai:DiVA.org:kth-153396DiVA: diva2:754377
Note

QC 20141010

Available from: 2014-10-10 Created: 2014-10-03 Last updated: 2017-12-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Östling, Mikael
By organisation
Integrated Devices and Circuits
In the same journal
MRS bulletin
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 42 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf