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Comprehensive temperature modeling of strained epitaxial silicon-germanium alloy thermistors
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-5845-3032
2009 (English)In: 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009, 5378337- p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2009. 5378337- p.
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Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-152769DOI: 10.1109/ISDRS.2009.5378337Scopus ID: 2-s2.0-77949371056ISBN: 978-142446030-4 (print)OAI: oai:DiVA.org:kth-152769DiVA: diva2:754397
Conference
2009 International Semiconductor Device Research Symposium, ISDRS '09, 9 December 2009 through 11 December 2009, College Park, MD, United States
Note

QC 20141010

Available from: 2014-10-10 Created: 2014-10-01 Last updated: 2014-10-10Bibliographically approved

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Malm, B. Gunnar

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Malm, B. GunnarKolahdouz, MohammadrezaRadamson, Henry H.Östling, Mikael
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