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Radiation hardness assessment of high voltage 4H-SiC BJTs
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2009 (English)In: Device Research Conference, 2009. DRC 2009, 2009, 279-280 p.Conference paper (Refereed)
Abstract [en]

Silicon carbide (SiC) based bipolar junction transistors (BJTs) are in teresting can didates fo r high temperature and for high power applications primarily due to their low conduction losses and fast switching capability. While excellent room temperature characteristics in terms of high breakdown voltage, low on-resistance and high gain [1, 2] have bee n reported, very limited datais available for their assessment in extreme harsh environment (e.g., high temperature and/or radiation) where the conventional Si devices T4, 5] do not offer acceptable functionality. SiC based BJTs [3] have been irradiated with protons and 13C ions and show fairly stable electrical behavior with proton fluence up to 5 × 1010 p/cm-2 and 13C ions fluence up to 5 × 10 10 cm-2. Early results on neutron irradiated 6H-S1C JFETs [6] showed no significant change at fluences up to 1 × 1015 n/cm2, but degradation was increased significantly with additional fluence due to the introduction of dee p-level traps. Similarly, recent studies on SiC JF ETs and Schottly diodes with gamma rays (60Co) and protons reported no degradation from gamma rays up to a dose of ∼ 6 Mrad but high energy protons (63 MeV) at the fluence of 5 × 1015 p/cm 2 induced an 80 % reduction in saturated drain current [7] This work demonstrates for the first time the suitability of SiC-B JTs when irradiated with gamma rays.

Place, publisher, year, edition, pages
2009. 279-280 p.
, Device Research Conference - Conference Digest, DRC, ISSN 1548-3770
Keyword [en]
Bipolar junction transistor, Conduction loss, Electrical behaviors, Fast switching, Fluences, Harsh environment, High breakdown voltage, High energy proton, High gain, High power applications, High temperature, High voltage, On-resistance, Proton fluences, Radiation hardness, Room temperature, Saturated drain currents, Schottly diodes, Si devices, Bipolar transistors, Degradation, Drain current, Gamma rays, Heavy ions, Heterojunction bipolar transistors, High temperature applications, Protons, Silicon carbide, Stars, Tunnel diodes, Semiconducting silicon compounds
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-152713DOI: 10.1109/DRC.2009.5354932ScopusID: 2-s2.0-76549131521ISBN: 978-142443528-9OAI: diva2:754825
67th Device Research Conference, DRC 2009, 22 June 2009 through 24 June 2009, University Park, PA, United States

QC 20141013

Available from: 2014-10-13 Created: 2014-10-01 Last updated: 2014-10-13Bibliographically approved

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