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Oxidation of nanopores in a silicon membrane: self-limiting formation of sub-10nm circular openings
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.ORCID iD: 0000-0003-3833-9969
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.
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2014 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 25, no 35, 355302- p.Article in journal (Refereed) Published
Abstract [en]

We describe a simple but reliable approach to shrink silicon nanopores with nanometer precision for potential high throughput biomolecular sensing and parallel DNA sequencing. Here, nanopore arrays on silicon membranes were fabricated by a self-limiting shrinkage of inverted pyramidal pores using dry thermal oxidation at 850 degrees C. The shrinkage rate of the pores with various initial sizes saturated after 4 h of oxidation. In the saturation regime, the shrinkage rate is within +/- 2 nm h(-1). Oxidized pores with an average diameter of 32 nm were obtained with perfect circular shape. By careful design of the initial pore size, nanopores with diameters as small as 8 nm have been observed. Statistics of the pore width show that the shrinkage process did not broaden the pore size distribution; in most cases the distribution even decreased slightly. The progression of the oxidation and the deformation of the oxide around the pores were characterized by focused ion beam and electron microscopy. Cross-sectional imaging of the pores suggests that the initial inverted pyramidal geometry is most likely the determining factor for the self-limiting shrinkage.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2014. Vol. 25, no 35, 355302- p.
Keyword [en]
Solid-state nanopores, silicon, thermal oxidation
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-153850DOI: 10.1088/0957-4484/25/35/355302ISI: 000341807600006ScopusID: 2-s2.0-84906085347OAI: diva2:754876
Swedish Foundation for Strategic Research

QC 20141013

Available from: 2014-10-13 Created: 2014-10-09 Last updated: 2015-03-25Bibliographically approved

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Zhang, MiaoSchmidt, TorstenSangghaleh, FatemehRoxhed, NiclasSychugov, IlyaLinnros, Jan
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