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High dose Fe implantation of gan: Damage build-up and dopant redistribution
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2008 (English)In: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, Vol. 100, no PART 4Conference paper, Published paper (Refereed)
Abstract [en]

Undoped GaN epilayers implanted at room temperature with 50-325 keV Fe + ions in the fluence range of 1015 - 1017 ions/cm are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. Results show that for high ion fluences (>1 × 1016 cm-2) enhanced Fe concentration closer to the surface is observed. The Fe redistribution towards the surface increases as the ion fluence increases. Our findings are attributed to radiation enhanced diffusion during ion implantation and increasing of Fe diffusivity in the implantation-induced amorphous phase near the surface.

Place, publisher, year, edition, pages
2008. Vol. 100, no PART 4
Series
Journal of Physics Conference Series, ISSN 1742-6588 ; 100
Keyword [en]
Amorphous phase, Diffusivities, Dopant redistribution, Elastic recoil detection analysis, Fluence range, GaN epilayers, High dose, Ion fluences, Radiation enhanced diffusion, Room temperature, Rutherford backscattering/channeling, Time of flight, Gallium alloys, Gallium nitride, Ion implantation, Molecular beam epitaxy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-154018DOI: 10.1088/1742-6596/100/4/042036ISI: 000275655200084Scopus ID: 2-s2.0-77954330322OAI: oai:DiVA.org:kth-154018DiVA: diva2:755073
Conference
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, SWEDEN, JUL 02-06, 2007
Note

QC 20141013

Available from: 2014-10-13 Created: 2014-10-10 Last updated: 2014-10-13Bibliographically approved

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Hallén, AndersLourdudoss, Sebastian

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