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Strong photoacoustic pulses generated in TlGaSe2 layered crystals
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-5260-5322
2008 (English)In: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, Vol. 100, no PART 4Conference paper, Published paper (Refereed)
Abstract [en]

Periodic deflections of infrared probe beam in TlGaSe2 crystal after its lateral excitation by laser pulse with photon energy near the band gap are observed. Such deflections arise from travelling of the acoustic pulse within sample which, in turn, is produced by optical pump pulse through photoacoustic effect. The photoacoustic pulse is generated within thin region near the crystal excited face, much shorter then the light penetration depth. In the case of volume excitation photoacoustic pulse is also generated in the region near back face as well. Tentative explanation of the generation mechanism is discussed.

Place, publisher, year, edition, pages
2008. Vol. 100, no PART 4
Series
Journal of Physics Conference Series, ISSN 1742-6588 ; 100
Keyword [en]
Acoustic pulse, Band gaps, Generation mechanism, Infrared probes, Lateral excitation, Layered crystals, Light penetration depth, Optical pumps, Periodic deflection, Photoacoustic pulse, Photon energy, Laser excitation, Optical pumping, Pulsed laser applications
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-154019DOI: 10.1088/1742-6596/100/4/042007ISI: 000275655200055Scopus ID: 2-s2.0-77954328258OAI: oai:DiVA.org:kth-154019DiVA: diva2:755079
Conference
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, SWEDEN,JUL 02-06, 2007
Note

QC 20141013

Available from: 2014-10-13 Created: 2014-10-10 Last updated: 2014-10-13Bibliographically approved

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Linnros, Jan

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  • apa
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