Selective growth of B- and C-doped SiGe layers in unprocessed and recessed Si openings for pMOSFET application
2009 (English)In: EUROCVD 17 / CVD 17, Electrochemical Society, 2009, no 8 PART 1, 81-88 p.Conference paper (Refereed)
This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.
Place, publisher, year, edition, pages
Electrochemical Society, 2009. no 8 PART 1, 81-88 p.
, ECS Transactions, ISSN 1938-5862 ; 25
Boron-doping, C-doped, Concentration of, Ge content, Growth parameters, matrix, On chips, Pattern dependencies, pMOSFET, Selective epitaxial growth, Selective growth, SiGe layers, Strain reduction, Boron, Doping (additives), Germanium, Silicon alloys, Chemical vapor deposition
IdentifiersURN: urn:nbn:se:kth:diva-152715DOI: 10.1149/1.3207578ISI: 000338305900009ScopusID: 2-s2.0-76549108240ISBN: 978-156677745-2OAI: oai:DiVA.org:kth-152715DiVA: diva2:755167
17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society, 4 October 2009 through 9 October 2009, Vienna, Austria
QC 201410142014-10-142014-10-012014-10-14Bibliographically approved