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Selective growth of B- and C-doped SiGe layers in unprocessed and recessed Si openings for pMOSFET application
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2009 (English)In: EUROCVD 17 / CVD 17, Electrochemical Society, 2009, no 8 PART 1, 81-88 p.Conference paper, Published paper (Refereed)
Abstract [en]

This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.

Place, publisher, year, edition, pages
Electrochemical Society, 2009. no 8 PART 1, 81-88 p.
Series
ECS Transactions, ISSN 1938-5862 ; 25
Keyword [en]
Boron-doping, C-doped, Concentration of, Ge content, Growth parameters, matrix, On chips, Pattern dependencies, pMOSFET, Selective epitaxial growth, Selective growth, SiGe layers, Strain reduction, Boron, Doping (additives), Germanium, Silicon alloys, Chemical vapor deposition
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-152715DOI: 10.1149/1.3207578ISI: 000338305900009Scopus ID: 2-s2.0-76549108240ISBN: 978-156677745-2 (print)OAI: oai:DiVA.org:kth-152715DiVA: diva2:755167
Conference
17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society, 4 October 2009 through 9 October 2009, Vienna, Austria
Note

QC 20141014

Available from: 2014-10-14 Created: 2014-10-01 Last updated: 2014-10-14Bibliographically approved

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Kolahdouz, MohammadrezaAdibi, P. Tabib ZadehFarniya, Ali AfsharTrybom, ErikDi Benedetto, LuigiShayestehaminzadeh, SeyedmohammadRadamson, Henry H.
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Integrated Devices and Circuits
Inorganic Chemistry

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CiteExportLink to record
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Citation style
  • apa
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