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Concentric silicon micro-ring resonators with enhanced transmission notch depth
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2008 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, 2008Conference paper, Published paper (Refereed)
Abstract [en]

In this work, we have analyzed, fabricated and demonstrated concentric micro-ring resonators in silicon-on-insulator (SOI) structure for enhanced transmission notches. The operation principles of the concentric ring resonators are studied by time-domain coupled-mode theory. Directional coupling between concentric rings offers another freedom in designing deep notch optical filters and ultra-sensitive biosensors. The finite-difference-time-domain (FDTD) simulations have shown the improvement of the notch depth, evenly distributed mode field and the effect of the resonance shift. The device is demonstrated in silicon-on-insulator structure. Transmission notch depth improvement of ~ 15dB is demonstrated for the 21-20.02-μm-radius double-ring structure comparing with the single 21-μm-radius ring.

Place, publisher, year, edition, pages
2008.
Series
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 7135
Keyword [en]
Concentric micro-ring resonators, Silicon-on-insulator, Concentric rings, Coupled-mode theories, Directional couplings, Distributed modes, Enhanced transmissions, Finite difference time domains, Notch depths, Operation principles, Resonance shifts, Ring structures, Silicon-on-insulator structures, Time domains, Biosensors, Microsensors, Nonmetals, Optical filters, Optical resonators, Optoelectronic devices, Resonators, Time domain analysis, Notch filters
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Other Physics Topics
Identifiers
URN: urn:nbn:se:kth:diva-154164DOI: 10.1117/12.804230Scopus ID: 2-s2.0-62649123852OAI: oai:DiVA.org:kth-154164DiVA: diva2:756194
Conference
Optoelectronic Materials and Devices III, 27 October 2008 through 30 October 2008, Hangzhou
Note

QC 20141016

Available from: 2014-10-16 Created: 2014-10-14 Last updated: 2014-10-16Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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More styles
Language
  • de-DE
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